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NTHL025N065SC1 - SiC MOSFET

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ON Semiconductor

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NTHL025N065SC1 SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NTHL025N065SC1

Datasheet Details

Part number	NTHL025N065SC1
Manufacturer	ON Semiconductor
File Size	295.13 KB
Description	SiC MOSFET
Datasheet	NTHL025N065SC1 Datasheet
Additional preview pages of the NTHL025N065SC1 datasheet.

Product details

Features

Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V.
Ultra Low Gate Charge (QG(tot) = 164 nC).
Low Capacitance (Coss = 278 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: Oct 11, 2024 |