NIMD6302R2 - HDPlus Dual N-Channel Self-protected Field Effect Transistors

ON Semiconductor

Datasheet Details

Part number	NIMD6302R2
Manufacturer	ON Semiconductor ↗
File Size	116.48 KB
Description	HDPlus Dual N-Channel Self-protected Field Effect Transistors
Datasheet	NIMD6302R2_ONSemiconductor.pdf

They are capable of withstanding high energy in the avalanche and commutation modes. The avalanche energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. This HDPlus device features an integrated Gate.
to.
Source clamp for ESD protection. Also, this device features a mirror FET for current monitoring.
±3.5% Current Mirror Accuracy in Linear Region.
±15% Cu.

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Published: Apr 27, 2007 |