Datasheet4U Logo Datasheet4U.com

MTY14N100E - Power Field Effect Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – MTY14N100E

Datasheet Details

Part number MTY14N100E
Manufacturer ON Semiconductor
File Size 205.28 KB
Description Power Field Effect Transistor
Datasheet download datasheet MTY14N100E Datasheet
Additional preview pages of the MTY14N100E datasheet.

Product details

Features

📁 Similar Datasheet

  • MTY100N10E - TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM (Motorola)
  • MTY10N100E - TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM (Motorola)
  • MTY16N80E - TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM (Motorola)
  • MTY25N60E - TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM (Motorola)
  • MTY30N50E - TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM (Motorola)
  • MTY55N20E - TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM (Motorola)
Other Datasheets by ON Semiconductor
Published: |