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MTY10N100E Datasheet - Motorola

MTY10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY10N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY10N100E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and.

MTY10N100E Features

* into an inductive load; however, snubbing reduces switching losses. 8000 VDS = 0 V 7000 C, CAPACITANCE (pF) 6000 Ciss VGS = 0 V TJ = 25°C 10000 VGS = 0 V Ciss TJ = 25°C C, CAPACITANCE (pF) 5000 4000 3000 2000 1000 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Coss Crss Ciss 1000 Coss 100 Crss 10 10 1

MTY10N100E Datasheet (228.66 KB)

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Datasheet Details

Part number:

MTY10N100E

Manufacturer:

Motorola

File Size:

228.66 KB

Description:

Tmos power fet 10 amperes 1000 volts rds(on) = 1.3 ohm.

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MTY10N100E TMOS POWER FET AMPERES 1000 VOLTS RDSon 1.3 OHM Motorola

MTY10N100E Distributor