MTY14N100E Datasheet (Motorola) - TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

MTY14N100E, TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY14N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switchi

MTY14N100E Features

* DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 1000 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY14N100E VGS, GATE