MTP5N40E Datasheet (ON Semiconductor)

MTP5N40E, High Energy Power FET

MTP5N40E Designer’s™ Data Sheet TMOS E FET.™ High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the

MTP5N40E Features

* s of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 11 are present. Full or half

* bridge PWM DC motor controllers are common applications requiring CSOA data. Stray inductances in Motorola’s test circuit are assumed t