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MTP50P03HDLG - Power MOSFET

Features

  • Avalanche Energy Specified.
  • Source.
  • to.
  • Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • These are Pb.
  • Free Devices.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MTP50P03HDLG Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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