MTB50N06V Datasheet (ON Semiconductor)

MTB50N06V, Power MOSFET

MTB50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTB50N06V Features

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 4 VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) t, TIME (ns) MTB50N06V VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 14 12 10 8 Q1 6 4 QT Q2 56 48 40 VGS 32 ID = 42 A TJ = 25°C 24 16 1000 VDD =