MTB50N10E3 - N-Channel Enhancement Mode Power MOSFET

Name: MTB50N10E3
SKU: MTB50N10E3-1049042

Cystech Electonics

The MTB50N10E3 by Cystech Electonics is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	MTB50N10E3
Manufacturer	Cystech Electonics
File Size	337.69 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB50N10E3-CystechElectonics.pdf
Additional preview pages of the MTB50N10E3 datasheet.

Low Gate Charge.
Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A.
Repetitive Avalanche Rated.
Fast Switching Characteristic.
Pb-free lead plating and RoHS compliant package 100V 29A 32mΩ (typ) 33mΩ (typ) Symbol MTB50N10E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTB50N10E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4.

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Published: Sep 4, 2016 |