MTB3N60E Datasheet - ON Semiconductor

MTB3N60E High Energy Power FET

MTB3N60E Product Preview TMOS E FET.™ High Energy Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other indu.

MTB3N60E Datasheet (137.47 KB)