MTB3N100E Datasheet (ON Semiconductor)

MTB3N100E, High Energy Power FET

MTB3N100E Designer’s™ Data Sheet TMOS E FET.™ High Energy Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate http://onsemi.com TMOS POWER FET The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.

This high voltage MOSFET uses an advanced termination scheme to

MTB3N100E Features

* dds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the