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M75N06HD Datasheet - ON Semiconductor

M75N06HD, Power MOSFET

MTP75N06HD Preferred Device Power MOSFET 75 A, 60 V, N *Channel, TO *220 This Power MOSFET is designed to withstand high energy in the a
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Features

* 0 V TJ = 25°C C, CAPACITANCE (pF) 4000 3000 Crss Ciss 2000 1000 0 10 5 05 VGS VDS Coss Crss 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi. com 4 MTP75N06HD VGS, GATE
* TO
* SOURCE V

Applications

* in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
* Diode is Characteri

M75N06HD-ONSemiconductor.pdf

Preview of M75N06HD PDF

Datasheet Details

Part number:

M75N06HD

Manufacturer:

ON Semiconductor ↗

File Size:

125.26 KB

Description:

Power mosfet.

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