KSD2012 Datasheet (ON Semiconductor) - NPN Epitaxial Silicon Transistor

KSD2012, NPN Epitaxial Silicon Transistor

98AON67439E Electronic versions are uncontrolled except when accessed directly from the Document Repository.

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NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier KSD2012 Complementary to KSB1366 This is a Pb Free Device ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector Base Voltage 60 V VCEO Collector Emitter Voltage 60 V VEBO Emitter Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector Power Dissipation (TC = 25°C) 25 W TJ Junction Temp