FQPF27P06 - P-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FQPF27P06
Manufacturer	ON Semiconductor
File Size	322.13 KB
Description	P-Channel MOSFET
Datasheet	FQPF27P06-ONSemiconductor.pdf

FQPF27P06 Product details

Description

This P Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energy strength.

Features

17 A,.
60 V, RDS(on) = 70 mW (Max. ) @ VGS =.
10 V, ID =.
8.5 A.
Low Gate Charge (Typ. 33 nC).
Low Crss (Typ. 120 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating www. onsemi. com VDSS.
60 V RDS(ON) MAX 70 mW @ 10 V S ID MAX.
17 A G D P.
Channel MOSFET GD S TO.
220F TO.
220 Fullpack, 3.
Lead / TO.
220F.
3SG CASE 221AT.

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Published: Jun 28, 2022 |