FQPF27N25 - 250V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF27N25
Manufacturer	Fairchild Semiconductor
File Size	432.51 KB
Description	250V N-Channel MOSFET
Datasheet	FQPF27N25_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

14 A, 250 V, RDS(on) = 110 mΩ (Max. ) @ VGS = 10 V, ID = 7 A.
Low Gate Charge (Typ. 50 nC).
Low Crss (Typ. 45 pF).
100% Avalanche Tested D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Cu.

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Published: Apr 1, 2005 |