FQPF27P06 - 60V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF27P06
Manufacturer	Fairchild Semiconductor
File Size	730.12 KB
Description	60V P-Channel MOSFET
Datasheet	FQPF27P06_FairchildSemiconductor.pdf

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

-17 A, -60 V, RDS(on)=26 mΩ(Max. ) @VGS=-10 V, ID=-8.5 A.
Low Gate Charge (Typ. 33 nC).
Low Crss (Typ. 120 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating GD S TO-220F G! Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-So.

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Published: Apr 1, 2005 |