FQD7P20 Datasheet (ON Semiconductor)

FQD7P20, P-Channel MOSFET

This P *Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s

FQD7P20 Features

* 5.7 A,

* 200 V, RDS(on) = 690 mΩ (Max.) @ VGS =

* 10 V, ID =

* 2.85 A

* Low Gate Charge (Typ. 19 nC)

* Low Crss (Typ. 25 pF)

* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratin