Description
Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field
stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera
tor where low conduction and switching losses are essential.
Features
- Maximum Junction Temperature: TJ = 175°C.
- Positive Temperature Co.
- efficient for Easy Parallel Operating.
- High Current Capability.
- Low Saturation Voltage: VCE(sat) = 1.65 V(Typ. ) @ IC = 75 A.
- 100% of Parts Tested ILM.
- High Input Impedance.
- Tightened Parameter Distribution.
- Short Circuit Ruggedness > 5 ms @ 25°C.
- These Devices are Pb.
- Free and are RoHS Compliant.