FGH75T65UPD - IGBT

Product Overview

ON Semiconductor

Datasheet Details

Part number	FGH75T65UPD
Manufacturer	ON Semiconductor
File Size	598.05 KB
Description	IGBT
Datasheet	FGH75T65UPD Datasheet
Additional preview pages of the FGH75T65UPD datasheet.

Product details

Description

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera tor where low conduction and switching losses are essential.

Features

Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(sat) = 1.65 V(Typ. ) @ IC = 75 A.
100% of Parts Tested ILM.
High Input Impedance.
Tightened Parameter Distribution.
Short Circuit Ruggedness > 5 ms @ 25°C.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Apr 1, 2020 |