FGH30S130P Datasheet (ON Semiconductor)

FGH30S130P, IGBT

Using advanced field stop trench and shorted *anode technology, ON Semiconductor’s shorted *anode trench IGBTs offer superior conduction and switching performances for soft switching applications.

The device can operate in parallel configuration with exceptional avalanche capability.

FGH30S130P Features

* High Speed Switching

* Low Saturation Voltage: VCE(sat) =1.75 V @ IC = 30 A

* High Input Impedance

* This Device is Pb

* Free and is RoHS Compliant Applications

* Induction Heating, Microwave Oven www.onsemi.com C G E E C G COLLECTOR (FLANGE) TO