FGH30T65UPDT - IGBT

Fairchild Semiconductor

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Datasheet Details

Part number	FGH30T65UPDT
Manufacturer	Fairchild Semiconductor
File Size	810.73 KB
Description	IGBT
Datasheet	FGH30T65UPDT-FairchildSemiconductor.pdf

FGH30T65UPDT Product details

Description

Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for solar inverter , UPS and digital power generator where low conduction and switching losses are essential. Solar Inverter, UPS, Digital Power Generator C COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol Description VCES VGES IC ICM(1) ILM(2) IF IFM(1) PD SCWT TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Transi

Features

Maximum Junction Temperature : TJ = 175oC.
Positive Temperaure Co-efficient for Easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(sat) = 1.65 V (Typ. ) @ IC = 30 A.
100% of Parts Tested ILM(2).
High Input Impedance.
Tightened Parameter Distribution.
RoHS Compliant.
Short Circuit Ruggedness > 5 us @ 25oC E C G General.

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Published: Jan 16, 2017 |