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FGAF30S65AQ - IGBT

ON Semiconductor

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Datasheet Details

Part number	FGAF30S65AQ
Manufacturer	ON Semiconductor
File Size	296.86 KB
Description	IGBT
Datasheet	FGAF30S65AQ-ONSemiconductor.pdf

FGAF30S65AQ Product details

Features

Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ. ) @ IC = 30 A.
100% of the Parts Tested for ILM (Note 1).
High Input Impedance.
Fast Switching.
Tighten Parameter Distribution.
IGBT with Monolithic Reverse Conducting Diode.
This Device is Pb.
Free and is RoHS Complia.

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Published: Apr 1, 2020 |