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FFSH3065B SiC Schottky Diode

FFSH3065B Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 30 A, 650 V, D2, TO-247-2L FFSH3065B .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

FFSH3065B Features

* Max Junction Temperature 175°C
* Avalanche Rated 144 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* AEC
* Q101 Qualified
* These Devices are

FFSH3065B Applications

* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters DATA SHEET www. onsemi. com 1 Cathode 2 Anode Schottky Diode TO
* 247
* 2LD CASE 340DA MARKING DIAGRAM AYWWZZ FFSH 3065B A YWW ZZ FFSH3065B = Assembly Plant Code = Date

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SiC Schottky Diode ON Semiconductor
ON Semiconductor FFSH3065B-like datasheet