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FFSH20120A Silicon Carbide Schottky Diode

FFSH20120A Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 20 A, 1200 V, D1, TO-247-2L FFSH20120A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

FFSH20120A Features

* Max Junction Temperature 175°C
* Avalanche Rated 200 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free a

FFSH20120A Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com 1. Cathode 2. Anode Schottky Diode 1 2 TO
* 247
* 2LD CASE 340CL MARKING DIAGRAM AYWWZZ FFSH 20120A A YWW ZZ FFSH20120A = Assembly Plant Code = Date Code (Year &

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Silicon Carbide Schottky Diode ON Semiconductor
ON Semiconductor FFSH20120A-like datasheet