FDV304P - P-Channel Digital FET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDV304P
Manufacturer	ON Semiconductor
File Size	176.80 KB
Description	P-Channel Digital FET
Datasheet	FDV304P Datasheet
Additional preview pages of the FDV304P datasheet.

Product details

Description

This P Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is tailored to minimize on state resistance at low gate drive conditions. state resistance even at gate drive voltages as low as 2.5 V.

Features

25 V,.
0.46 A Continuous,.
1.5 A Peak.
RDS(on) = 1.1 W @ VGS =.
4.5 V.
RDS(on) = 1.5 W @ VGS =.
2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
Gate.
Source Zener for ESD Ruggedness. > 6 kV Human Body Model.
Compact Industry Standard SOT.
23 Surface Mount Package.
This Device is Pb.
Free and Halide Free.

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Published: Jan 23, 2023 |