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FDS6982AS - Dual N-Channel MOSFET

Description

The FDS6982AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices.

Features

  • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.6A, 30V RDS(on) max= 13.5mΩ @ VGS = 10V RDS(on) max= 16.5mΩ @ VGS = 4.5V.
  • Low gate charge (21nC typical).
  • Q1: Optimized for low switching losses 6.3A, 30V RDS(on) max= 28.0mΩ @ VGS = 10V RDS(on) max= 35.0mΩ @ VGS = 4.5V.
  • Low gate charge (11nC typical) D1 D1 D2 D2 SO-8 G1 S1 G2 S2 5 4 6 Q1 3 7 2 Q2 8 1 Absolute Maximum Ratings TA = 25°C unless otherwise note.

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Datasheet Details

Part number FDS6982AS
Manufacturer onsemi
File Size 546.93 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDS6982AS Datasheet

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Full PDF Text Transcription

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FDS6982AS FDS6982AS Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™ General Description The FDS6982AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology.
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