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FDS6982 - Dual N-Channel/ Notebook Power Supply MOSFET

General Description

This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices.

Key Features

  • Q2: 8.6A, 30V. RDS(on) = 0.015 Ω @ VGS = 10V RDS(on) = 0.020 Ω @ VGS = 4.5V Q1: 6.3A, 30V. RDS(on) = 0.028 Ω @ VGS = 10V RDS(on) = 0.035 Ω @ VGS = 4.5V.
  • Fast switching speed. Low gate charge (Q1 typical = 8.5nC). High performance trench technology for extremely low RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6982 June 1999 FDS6982 Dual N-Channel, Notebook Power Supply MOSFET General Description This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrenchTM MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction (less than 20mΩ at VGS = 4.5V). Features • • Q2: 8.6A, 30V. RDS(on) = 0.015 Ω @ VGS = 10V RDS(on) = 0.020 Ω @ VGS = 4.5V Q1: 6.3A, 30V. RDS(on) = 0.028 Ω @ VGS = 10V RDS(on) = 0.035 Ω @ VGS = 4.