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MOSFET – N-Channel, POWERTRENCH)
100 V, 7.5 A, 22 mW
FDS3672
Features
• rDS(ON) = 19 mW (Typ.), VGS = 10 V, ID = 7.5 A • Qg(tot) = 28 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • Optimized Efficiency at High Frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • Pb−Free and Halide Free
Applications
• DC−DC Converters and Off−Line UPS • Distributed Power Architecture and VRMs • Primary Switch for 24 V and 48 V Systems • High Voltage Synchronous Rectifier
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Ratings Unit
VDSS Drain to Source Voltage
100
V
VGS Gate to Source Voltage
±20
V
ID
Drain Current
A
Continuous (TA = 25°C, VGS = 10 V,
7.5
RqJA = 50°C/W)
Continuous (TA = 100°C, VGS = 10 V,
4.
FDS3672 Datasheet
