• Part: FDS3672
  • Description: 100V N-ChanneI MOSFET
  • Category: MOSFET
  • Manufacturer: UMW
  • Size: 1.54 MB
Download FDS3672 Datasheet PDF
UMW
FDS3672
Features ID=7.5A RDS(ON)=23mΩ(VGS=10V) Qg(tot) = 28n C(Typ.),VGS=10V Low Miller Charge 2.Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Low Qrr Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier 3.Pinning information Pin 4 1,2,3 5,6,7,8 Symbol G S D Description GATE SOURCE DRAIN SOP-8 4.Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (TA=25°C, VGS=10V, RθJA=50°C/W) Continuous (TA=100°C, VGS=10V, RθJA=50°C/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power Dissipation Derate above 25°C Storage Temperature Symbol VDSS VGS EAS PD TJ,TSTG Rating Units 100 V ±20 Figure 4 416 m J 20 m W/°C -55 to 150 °C UTD Semiconductor Co.,Limited .umw-ic. Nov.2024 1 of...