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FDP2D9N12C - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDP2D9N12C
Manufacturer	ON Semiconductor
File Size	300.58 KB
Description	N-Channel MOSFET
Datasheet	FDP2D9N12C-ONSemiconductor.pdf

FDP2D9N12C Product details

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 2.95 mW at VGS = 10 V, ID = 181 A.
50% Lower Qrr than Other MOSFET Suppliers.
Lowers Switching Noise/EMI.
100% UIL Tested.
These Devices are Pb.
Free, Halogen.
Free and are RoHS Compliant Typical.

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Published: Aug 22, 2024 |