FDMS86500L - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDMS86500L
Manufacturer	ON Semiconductor
File Size	525.56 KB
Description	N-Channel MOSFET
Datasheet	FDMS86500L Datasheet
Additional preview pages of the FDMS86500L datasheet.

Product details

Description

This N Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

Max rDS(on) = 2.5 mW at VGS = 10 V, ID = 25 A.
Max rDS(on) = 3.7 mW at VGS = 4.5 V, ID = 20 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
Next generation enhanced body diode technology, engineered for soft recovery.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant.

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Published: Dec 20, 2023 |