Datasheet4U Logo Datasheet4U.com

FDMS86500DC - N-Channel MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.

Features

  • Dual CoolTM Top Side Cooling PQFN package.
  • Max rDS(on) = 2.3 mΩ at VGS = 10 V, ID = 29 A.
  • Max rDS(on) = 3.3 mΩ at VGS = 8 V, ID = 24 A.
  • High performance technology for extremely low rDS(on).
  • 100% UIL Tested.
  • RoHS Compliant General.

📥 Download Datasheet

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET November 2012 FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET 60 V, 108 A, 2.3 mΩ Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.3 mΩ at VGS = 10 V, ID = 29 A „ Max rDS(on) = 3.3 mΩ at VGS = 8 V, ID = 24 A „ High performance technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Published: |