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FDMC8360L - N-Channel MOSFET

Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 2.1 mW at VGS = 10 V, ID = 27 A.
  • Max RDS(on) = 3.1 mW at VGS = 4.5 V, ID = 22 A.
  • High Performance Technology for Extremely Low RDS(on).
  • Termination is Lead.
  • Free.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet Details

Part number FDMC8360L
Manufacturer onsemi
File Size 408.27 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC8360L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, Shielded Gate POWERTRENCH) 40 V, 80 A, 2.1 mW FDMC8360L General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 2.1 mW at VGS = 10 V, ID = 27 A • Max RDS(on) = 3.1 mW at VGS = 4.
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