FDG6332C Datasheet (ON Semiconductor)

FDG6332C, Dual-Channel MOSFET

The N & P *Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on *state resistance and yet maintain superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small

FDG6332C Features

* Q1 0.7 A, 20 V  RDS(ON) =300 mW @ VGS = 4.5 V  RDS(ON) = 400 mW @ VGS = 2.5 V

* Q2

* 0.6 A,

* 20 V  RDS(ON) = 420 mW @ VGS =

* 4.5 V  RDS(ON) = 630 mW @ VGS =

* 2.5 V

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(ON)