FDG6335N Datasheet (Fairchild Semiconductor)

FDG6335N, 20V N&P-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small p

FDG6335N Features

* 0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V

* Low gate charge (1.1 nC typical)

* High performance trench technology for extremely low RDS(ON)

* Compact industry standard SC70-6 surface mount package Applications

* DC/DC conver