FDG6332C Datasheet (Fairchild Semiconductor)

FDG6332C, 20V N&P-Channel MOSFET

The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very sma

FDG6332C Features

* Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V

* Q2

* 0.6 A,

* 20V. RDS(ON) = 420 mΩ @ VGS =

* 4.5 V RDS(ON) = 630 mΩ @ VGS =

* 2.5 V

* Low gate charge

* High performance trench technology for extremely low R