FDB1D7N10CL7 100V 268A N-Channel Shielded Gate MOSFET

ON Semiconductor

Description

N-Channel Shielded Gate POWERTRENCH) MOSFET 100 V, 1.7 mW, 268 A FDB1D7N10CL7 .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDB1D7N10CL7
Manufacturer: ON Semiconductor ↗
File Size: 349.38 KB
Datasheet: FDB1D7N10CL7-ONSemiconductor.pdf
Description: 100V 268A N-Channel Shielded Gate MOSFET

Features

* Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A
* Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A
* Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A
* Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Swi

Applications

* Industrial Motor Drive
* Industrial Power Supply
* Industrial Automation
* Battery Operated Tools
* Battery Protection
* Solar Inverters
* UPS and Energy Inverters
* Energy Storage
* Load Switch MAXIMUM RATINGS (TC = 25°C, Un

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FDB1D7N10CL7 100V 268A N-Channel Shielded Gate MOSFET ON Semiconductor

ON Semiconductor FDB1D7N10CL7-like datasheet