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FDB1D7N10CL7 - 100V 268A N-Channel Shielded Gate MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDB1D7N10CL7
Manufacturer	ON Semiconductor ↗
File Size	349.38 KB
Description	100V 268A N-Channel Shielded Gate MOSFET
Datasheet	FDB1D7N10CL7-ONSemiconductor.pdf

FDB1D7N10CL7 Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced PO

Features

Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A.
Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A.
Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A.
Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A.
50% Lower Qrr than Other MOSFET Suppliers.
Lowers Switching Noise/EMI.
ESD Protection Level: HBM > 4 kV, CDM > 2 kV.
MSL1 Robust Package Design.
100% UIL Tested.

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Published: Aug 26, 2025 |