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FCH76N60NF - N-Channel MOSFET

FCH76N60NF Description

MOSFET * N-Channel, SUPREMOS, FRFET 600 V, 72.8 A, 38 mW FCH76N60NF .
The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super. junction (SJ) technology employing a deep trench filling proc.

FCH76N60NF Features

* RDS(on) = 28.7 mW (Typ. ) @ VGS = 10 V, ID = 38 A
* Ultra Low Gate Charge (Typ. Qg = 230 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 896 pF)
* 100% Avalanche Tested
* This Device is Pb

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N-Channel MOSFET ON Semiconductor
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