FCH76N60N MOSFET

Fairchild Semiconductor

Description

FCH76N60N * N-Channel SupreMOS® MOSFET FCH76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ November 2013 .
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.

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Datasheet Specifications

Part number: FCH76N60N
Manufacturer: Fairchild Semiconductor
File Size: 573.06 KB
Datasheet: FCH76N60N-FairchildSemiconductor.pdf
Description: MOSFET

Features

* RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A
* Ultra Low Gate Charge (Typ. Qg = 218 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 914 pF)
* 100% Avalanche Tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G D S TO-247 G S MOSFET Maximum Ratings TC = 25oC unless otherwise

FCH76N60N Distributors

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FCH76N60N MOSFET Fairchild Semiconductor

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