CPH6347 - Power MOSFET

onsemi

Features

Low Gate Drive Voltage.
ESD Diode-Protected Gate.
Pb-Free, Halogen Free and RoHS Compliance VDSS.
20V RDS(on) Max 39mΩ@.
4.5V 66mΩ@.
2.5V 102mΩ@.
1.8V ID Max.
6A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2.

CPH6347 power mosfet by ON Semiconductor - Datasheet Preview

Datasheet Details

Part number	CPH6347
Manufacturer	onsemi
File Size	388.75 KB
Description	Power MOSFET
Datasheet	CPH6347 Datasheet

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Full PDF Text Transcription

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CPH6347 Power MOSFET –20V, 39mΩ, –6A, Single P-Channel www.onsemi.com Features • Low Gate Drive Voltage • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance VDSS −20V RDS(on) Max 39mΩ@ −4.5V 66mΩ@ −2.5V 102mΩ@ −1.8V ID Max −6A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) Junction Temperature PD Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value −20 ±12 −6 −24 Unit V V A A 1.6 150 −55 to +150 W °C °C Value Unit 78.

Published: Oct 27, 2015 |