Datasheet4U Logo Datasheet4U.com

CPH6341 - P-Channel Silicon MOSFET

Features

  • General-Purpose Switching Device.

📥 Download Datasheet

Datasheet preview – CPH6341

Datasheet Details

Part number CPH6341
Manufacturer SANYO (now Panasonic)
File Size 110.54 KB
Description P-Channel Silicon MOSFET
Datasheet download datasheet CPH6341 Datasheet
Additional preview pages of the CPH6341 datasheet.

📁 Similar Datasheet

  • CPH6347 - Power MOSFET (ON Semiconductor)
  • CPH6314 - P-Channel Silicon MOSFET (ON Semiconductor)
  • CPH6324 - P-Channel MOSFET (VBsemi)
  • CPH6337 - Power MOSFET (ON Semiconductor)
  • CPH6350 - P-Channel Power MOSFET (ON Semiconductor)
  • CPH6354 - Power MOSFET (ON Semiconductor)
  • CPH6355 - Power MOSFET (ON Semiconductor)
  • CPH6001A - RF Transistor (ON Semiconductor)
  • CPH6003A - RF Transistor (ON Semiconductor)
  • CPH6020 - RF Transistor (ON Semiconductor)
Other Datasheets by Sanyo Semicon Device
  • CPH6340 - P-Channel Silicon MOSFET
  • CPH6347 - P-Channel Silicon MOSFET
  • CPH6301 - Ultrahigh-Speed Switching Applications
  • CPH6302 - Ultrahigh-Speed Switching Applications
  • CPH6306 - Ultrahigh-Speed Switching Applications
  • CPH6311 - Ultrahigh-Speed Switching Applications
  • CPH6312 - High-Speed Switching Applications
  • CPH6313 - High-Speed Switching Applications

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr Ordering number : ENA1084 CPH6341 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6341 Features • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings --30 ±20 --5 --20 1.
Published: |