Datasheet4U.com

CPH3350 - P-Channel Power MOSFET

ON Semiconductor

📥 Download Datasheet

CPH3350 Datasheet Preview — Preview of CPH3350 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	CPH3350
Manufacturer	ON Semiconductor
File Size	177.61 KB
Description	P-Channel Power MOSFET
Datasheet	CPH3350-ONSemiconductor.pdf

CPH3350 Product details

Features

Ultrahigh-speed switching.
1.8V drive.
Halogen free compliance.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --20 ±10 --3 --12 1.0 150 --55.

📁 CPH3350 Similar Datasheet

CPH3351 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
CPH3355 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
CPH3356 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
CPH3303 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
CPH3304 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
CPH3305 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
CPH3306 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
CPH3307 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

CPH3348 - Power MOSFET
CPH3360 - Power MOSFET
CPH3362 - Power MOSFET
CPH3101 - Bipolar Transistor
CPH3105 - Bipolar Transistor
CPH3106 - Bipolar Transistor

Published: Oct 27, 2015 |