CPH3101 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of FBET and MBIT processes.
Large current capacity.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall-sized package permitting applied sets to be made small and slim.
High allowable power dissipation Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current.

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Published: Jan 30, 2016 |