BAS16TT1 Datasheet - ON Semiconductor

BAS16TT1 Silicon Switching Diode

BAS16TT1 Advance Information Silicon Switching Diode http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol VR IF IFM(surge) Max 75 200 500 Unit V mA mA 3 CATHODE 1 ANODE Preferred Device THERMAL CHARACTERISTICS Characteristic Total Power Dissipation, TA = 25°C (1) 3 Symbol PD TJ, Tstg RθJA Max 150 55 to +150 833 Unit mW °C °C/W 2 1 CASE 463 SOT 416/SC 75 STY.

BAS16TT1 Features

* suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and spe

BAS16TT1 Datasheet (123.65 KB)