ATP302 - P-Channel Power MOSFET

ON Semiconductor

Datasheet Details

ON-resistance RDS(on)1=10mΩ (typ. ).
4.5V drive.
Input capacitance Ciss=5400pF (typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VD.

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Published: Nov 6, 2015 |