ATP108 - P-Channel Power MOSFET

ON Semiconductor

Datasheet Details

Low ON-resistance.
Slim package.
Halogen free compliance.
Large current.
4.5V drive.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV.

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Published: Apr 29, 2017 |