2SA1417 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Speciﬁcations ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperatur.

📁 2SA1417 Similar Datasheet

2SA1411 - Transistor (ETC)
2SA1412 - PNP SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)
2SA1412-Z - PNP Transistor (NEC)
2SA1413 - PNP SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)
2SA1413-Z - PNP Transistor (INCHANGE)
2SA1415 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA1416 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA1418 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

Published: Jun 8, 2015 |