2SA1415 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SA1415
Manufacturer	Sanyo Semicon Device
File Size	35.51 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SA1415_SanyoSemiconDevice.pdf

Adoption of FBET process.
High breakdown voltage (VCEO=160V).
Excellent linearity of hFE and small Cob.
Fast switching speed.
Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1415 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Coll.

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Published: Mar 22, 2005 |