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20N60 - N-Channel MOSFET

Datasheet Summary

Description

SuperFET MOSFET is onsemi’s first generation of high voltage super

junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 150 mW.
  • Ultra Low Gate Charge (Typ. Qg = 75 nC ).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 165 pF ).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number 20N60
Manufacturer ON Semiconductor
File Size 420.52 KB
Description N-Channel MOSFET
Datasheet download datasheet 20N60 Datasheet
Additional preview pages of the 20N60 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, SuperFET) 600 V, 20 A, 190 mW FCP20N60, FCPF20N60 Description SuperFET MOSFET is onsemi’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 150 mW • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.
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