P9006EDG Datasheet - Niko-Sem

P9006EDG P-Channel Logic Level Enhancement

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) P9006EDG TO-252 Lead-Free D PRODUCT SUMMARY V(BR)DSS -60V RDS(ON) 90m ID -8A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS LIMITS -60 ±20 -7 -6 -30 28 18 -55 to 150 275 UNITS V V TC = 25 °C TC = 70 °C ID IDM .

P9006EDG Datasheet (308.74 KB)